Island formation without attractive interactions

We show that adsorbates on surfaces can form islands even if there are no attractive interactions. Instead strong repulsion between adsorbates at short distances can lead to islands, because such islands increase the entropy of the adsorbates that are not part of the islands. We suggest that this mechanism cause the observed island formation in O/Pt(111), but it may be important for many other systems as well.Comment: 11 pages, 4 figure

Graph-Based Shape Analysis Beyond Context-Freeness

We develop a shape analysis for reasoning about relational properties of data structures. Both the concrete and the abstract domain are represented by hypergraphs. The analysis is parameterized by user-supplied indexed graph grammars to guide concretization and abstraction. This novel extension of context-free graph grammars is powerful enough to model complex data structures such as balanced binary trees with parent pointers, while preserving most desirable properties of context-free graph grammars. One strength of our analysis is that no artifacts apart from grammars are required from the user; it thus offers a high degree of automation. We implemented our analysis and successfully applied it to various programs manipulating AVL trees, (doubly-linked) lists, and combinations of both

Bond breaking in vibrationally excited methane on transition metal catalysts

The role of vibrational excitation of a single mode in the scattering of methane is studied by wave packet simulations of oriented CH4 and CD4 molecules from a flat surface. All nine internal vibrations are included. In the translational energy range from 32 up to 128 kJ/mol we find that initial vibrational excitations enhance the transfer of translational energy towards vibrational energy and increase the accessibility of the entrance channel for dissociation. Our simulations predict that initial vibrational excitations of the asymmetrical stretch (nu_3) and especially the symmetrical stretch (nu_1) modes will give the highest enhancement of the dissociation probability of methane.Comment: 4 pages REVTeX, 2 figures (eps), to be published in Phys. Rev. B. (See also arXiv:physics.chem-ph/0003031). Journal version at http://publish.aps.org/abstract/PRB/v61/p1565

Domain wall structure in magnetic bilayers with perpendicular anisotropy

We study the magnetic domain wall structure in magnetic bilayers (two ultrathin ferromagnetic layers separated by a non magnetic spacer) with perpendicular magnetization. Combining magnetic force and ballistic electron emission microscopies, we are able to reveal the details of the magnetic structure of the wall with a high spatial accuracy. In these layers, we show that the classical Bloch wall observed in single layers transforms into superposed N\'eel walls due to the magnetic coupling between the ferromagnetic layers. Quantitative agreement with micromagnetic calculations is achieved.Comment: Author adresses AB, SR, JM and AT: Laboratoire de Physique des Solides, CNRS, Universit\'e Paris Sud, UMR 8502, 91405 Orsay Cedex, France ML : Laboratoire PMTM, Institut Galil\'ee, CNRS, Universit\'e Paris-13, UPR 9001, 93430 Villetaneuse, Franc

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.Comment: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev.